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參數(shù)資料
| 型號(hào)： | 12N035 |
| 英文描述： | N-Channel Field Effect Transistor |
| 中文描述： | N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 33K |
| 代理商： | 12N035 |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
12N035
Electrical Characteristics ( T
C = 25
°°°°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERSTICS
BVDSS
Drain source breakdown
voltage
VGS=0V, ID=250A
30
V
IDSS
Zero Gate Voltage Drain
Current
VDS=24V
VGS=0V
10
A
IGBLF
Gate-Body Leakage Forward
VGS=20V
VDS=0V
100
nA
IGBLR
Gate-Body Leakage Reverse
VGS=-20V
VDS=0V
-100
nA
ON CHARACTERSTICS
VGS(TH)
Gate Threshold Voltage
VDS=VGS
ID=250A
1
3
V
RDS(ON)
Static Drain Voltage
VGS=10V, ID=26A
VCS=4.5V, IO=21A
0.045
0.06
ID(ON)
ON-State Drain Current
VGS=10V
12
A
gfs
Forward Tranconductance
VDS=10V, ID =6A
9
S
DYNAMIC CHARACTRISTICS
CISS
Input Capacitance
550
pF
COSS
Output Capacitance
300
pF
CRSS
Reverse Tras. Capacitance
VDS= 10V, VGS=0V
F=1.0 MHZ
150
pF
SWITCHING CHARACTERSTICS
tD(ON)
Turn-ON Delay Time
16
tr
Turn-ON Rise Time
250
td(off)
Turn-OFF Delay Time
90
tF
Turn-OFF Fall Time
VDD=10V
ID=12A, VDS=10V
RGEN=24
200
nS
SOURCE DRAIN DIODE CHRACTERISTICS
IS
Maxim Continuous Drain source Diode Forward Current
12
A
VDS (note)
Drain Source Diode
Forward Voltage
VGS=0V
IS=6A
1.30
V
THERMAI CHRACTERISTICS
RJC
Thermal Resistance, Junction to Case
5
°°°°C/W
RJC
Thermal Resistance, Junction to Ambient
100
°°°°C/W
Note: Pulse Test: Pulse With
≤ 300 S, Duty Cycle ≤ 2.0%
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
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