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參數(shù)資料
| 型號： | 12N035 |
| 英文描述： | N-Channel Field Effect Transistor |
| 中文描述： | N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | 12N035 |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
N-Channel Field Effect Transistor
12N035
Ordering Information
Device
Package
Temp.
12N035T
TO-220
0 to 150
°C
12N035S
TO-263 ( D
2 )
0 to 150
°C
Absolute Maximum Rating
Symbol
Parameter
Max
Unit
Drain Current
-Continues
12
ID
-Pulsed
36
A
VDSS
Drain-Source Voltage
30
V
VGSV
Gate Source Voltage
±20
V
Total Power Dissipation @ TC =25°C
50
W
PD
Derate above 25
°C
0.4
W/
°°°°C
TJ
Operating and Storage
TSTG
Temperature Range
-65 to 175
°°°°C
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2 surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low RDS(ON)
VDSS = 30V
RDS (ON) = 0.045
ID = 12A
Bay Linear
Inspire the Linear Power
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