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參數(shù)資料
| 型號： | 10GWJ2C48C |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, 12-10D1A, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 356K |
| 代理商： | 10GWJ2C48C |
10GWJ2C48C,U10GWJ2C48C
2006-11-10
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=5A
0.55
V
Repetitive Peak Reverse Current
IRRM
VRRM=Rated
3.5
mA
Junction Capacitance
Cj
VR=10V, f=1.0MHz
195
pF
Thermal Resistance
Rth (j-c)
Total DC, Junction to Case
2.2
°C / W
VFM, IRRM, Cj : A Value applied to one cell.
MARKING
Abbreviation Code
Part No.
10GWJ2C
10GWJ2C48C
10GWJ2C
U10GWJ2C48C
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IO:
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IO and Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Tamax-IO curve.
IFSM:
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 100°C.
Please refer to the Rectifiers databook for further information.
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
10GWJ2C
Characteristics
indicator
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 10JL2CZ47 | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| 10KF40 | 10 A, 400 V, SILICON, RECTIFIER DIODE |
| 10KF40B | 10 A, 400 V, SILICON, RECTIFIER DIODE |
| 10KQ30 | 10 A, 30 V, SILICON, RECTIFIER DIODE |
| 10KQ40 | 10 A, 40 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 10GWJ2C48C(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode Schottky 40V 10A 3-Pin(3+Tab) TO-220FL |
| 10GWJ2C48C_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SWITCHING MODE POWER SUPPLY APPLICATION |
| 10GWJ2CZ47(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 10GWJ2CZ47C | 制造商:Toshiba America Electronic Components 功能描述:SCHOTTKY 40V 10A 3PIN TO-220(NIS) - Rail/Tube |
| 10GWJ2CZ47C(F) | 制造商:Toshiba 功能描述:Diode Schottky 40V 10A 3-Pin(3+Tab) TO-220(NIS) Bulk |
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