參數(shù)資料
型號： 03P6MG
廠商： NEC Corp.
英文描述： 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
中文描述： 300毫安高耐壓電壓模具可控硅
文件頁數(shù)： 2/6頁
文件大?。?/td> 155K
代理商： 03P6MG
Data Sheet D15290EJ4V0DS
2
03P4MG,03P6MG
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 k
)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
Non-repetitive Peak Reverse
IRRM
VRM = VRRM
Tj = 25°C
10
A
Current
Tj = 125°C
100
A
Non-repetitive Peak Off-state
IDRM
VDM = VDRM
Tj = 25°C
10
A
Current
Tj = 125°C
100
A
Critical Rate-of-rise of Off-state
dVD/dt
10
V/
s
Voltage
Tj = 125°C, VDM =
3
2
VDRM
On-state Voltage
VT
IT = 4 A
2.2
V
Refer to Figure 1.
Gate Trigger Current
IGT
VDM = 6 V, RL = 100
3
50
A
Gate Trigger Voltage
VGT
VDM = 6 V, RL = 100
0.8
V
Gate Non-trigger Voltage
VGD
Tj = 125°C, VDM =
2
VDRM
0.2
V
Holding Current
IH
VDM = 24 V, ITM = 4 A
5mA
Turn-off Time
tq
Tj = 125°C, IT = 200 mA,
60
s
dIR/dt = 15 A/
s, VR ≥ 25 V,
VDM =
2
3
VDRM, dVD/dt = 10 V/
s
Thermal Resistance
Rth(j-C)
Junction-to-case DC
50
°C/W
Refer to Figure 14.
Rth(j-A)
Junction-to-ambient DC
230
°C/W
Refer to Figure 14.
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. iT vs.
υυυυT Characteristics
Figure 2. ITSM Rating
O
n
-s
ta
te
C
u
rr
e
n
ti
T
(m
A
)
MAX.
0123
Tj = 125C
25C
10000
1000
100
10
On-state Voltage
υT (V)
S
u
rge
On-st
a
te
Current
I
TS
M
(A
)
At initial, Tj = 125C
ITSM
10 ms 20 ms
14
12
10
8
6
4
2
0
1
10
100
550
Cycles (N)
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