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參數資料
| 型號： | μPG152TA |
| 廠商： | NEC Corp. |
| 英文描述： | L-Band SPDT Switch(單刀雙擲開關) |
| 中文描述： | L波段單刀雙擲開關（單刀雙擲開關） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 83K |
| 代理商： | ΜPG152TA |
GaAs INTEGRATED CIRCUIT
P
PG152TA
L-BAND SPDT SWITCH
1996
Document No. P12398EJ2V1DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The
P
PG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss.
It housed in as original 6 pin mini-mold that is smaller than usual 8 pin SSOP and easy to install and contributes to
miniaturizing the system. It can be used in wide-band switching applications.
FEATURES
Low insertion loss
High power switching : P
in
(1 dB)
= +30 dBm typ. @ V
CONT
= +3.0 V/0 V, f = 2 GHz
Small 6 pin mini-mold
: L
INS
= 0.6 dB typ. @ f = 2 GHz
APPLICATION
Digital cordless telephone
Digital hand-held cellular phone: PDC Antenna diversity etc.
: PHS, DECT, PCS etc.
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKING FORM
P
PG152TA-E3
6 pins Mini-mold
Carrier tape width 8 mm, 1 pin faces toward the open end of the tape,
3000 pcs/Reel
Remark
For evaluation sample order, please contact your local NEC sales office.
(Part number for sample order:
P
PG152TA)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
PARAMETERS
SYMBOL
RATING
UNIT
Control Voltage 1, 2
V
CONT1, 2
e
6.0 to +6.0
Note
V
Input Power
P
in
+31
dBm
Total Power Dissipation
P
tot
0.4
W
Operating Temperature
T
A
e
50 to +80
°C
Storage Temperature
T
stg
e
65 to +150
°C
Note
Condition 2.7
d
| V
CONT1
- V
CONT 2
|
d
6.0 V
Caution
The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
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