參數(shù)資料
型號: μPG153TB
廠商: NEC Corp.
英文描述: L-Band SPDT Switch(單刀雙擲開關(guān))
中文描述: L波段單刀雙擲開關(guān)(單刀雙擲開關(guān))
文件頁數(shù): 1/8頁
文件大小: 56K
代理商: ΜPG153TB
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs INTEGRATED CIRCUIT
μ
PG153TB
L-BAND SPDT SWITCH
Document No. P13632EJ2V0DS00 (2nd edition)
Date Published September 1999 N CP(K)
Printed in Japan
DATA SHEET
1998, 1999
The mark
shows major revised points.
DESCRIPTION
The
μ
PG153TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy
to install and contributes to miniaturizing the system.
FEATURES
Low Insertion Loss
High Linearity Switching: P
in (1 dB)
= +33.0 dBm TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
Small 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
: L
INS
= 0.7 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
APPLICATIONS
L, S-band digital cellular or cordless telephone
PCS, WLAN, and WLL applications
ORDERING INFORMATION
Part Number
Marking
Package
Supplying Form
μ
PG153TB-E3
G1J
6-pin super minimold
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
μ
PG153TB)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Symbol
Ratings
Unit
Control Voltage 1, 2
V
CONT1, 2
–6.0 to +6.0
Note
V
Input Power
P
in
+33
dBm
Total Power Dissipation
P
tot
0.15
W
Operating Temperature
T
A
–45 to +85
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
Condition 2.5
| V
CONT1
– V
CONT2
|
6.0 V
Remarks 1.
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85°C
2.
Operation in excess of any one of these parameters may result in permanent damage.
Caution
The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
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