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參數資料
| 型號： | μPD78F4216Y |
| 廠商： | NEC Corp. |
| 英文描述： | 8/16 Bit RISC Microcontrollers(8/16位RISC微控制器) |
| 中文描述： | 8 / 16位RISC微控制器（8 / 16位的RISC微控制器） |
| 文件頁數： | 20/56頁 |
| 文件大小： | 407K |
| 代理商： | ΜPD78F4216Y |
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20
μ
PD78F4216Y
Preliminary Data Sheet U11824EJ1V0DS00
6.2 Flash Memory Programming Function
The flash memory is written by transmitting or receiving commands and data in a selected communication mode.
The major functions of flash memory programming are listed in Table 6-2.
Table 6-2. Major Functions of Flash Memory Programming
Function
Description
Batch erasure
Erases all contents of memory.
Block erasure
Erases contents of specified memory block with one memory block consisting
of 16 Kbytes.
Batch blank check
Checks erased status of entire memory.
Block blank check
Checks erased status of specified block
Data write
Writes flash memory based on write start address and number of data to be
written (in bytes).
Batch verify
Compares all contents of memory with input data.
Block verify
Compares contents of specified memory block with input data.
6.3 Connecting Flashpro II, Flashpro III
The Flashpro II, Flashpro III and
μ
PD78F4216Y are connected differently depending on the selected communication
mode (3-wire serial I/O or UART). Figures 6-2 and 6-3 show the connections in the respective communication
modes.
Figure 6-2. Connection of Flashpro II, Flashpro III in 3-Wire Serial I/O Mode
Figure 6-3. Connection of Flashpro II, Flashpro III in UART Mode
Flashpro II,
Flashpro III
PD78F4216Y
μ
V
PP
V
DD
RESET
SCK0 or SCK1 or SCK2
SI0 or SI1 or SI2
SO0 or SO1 or SO2
V
SS
Flashpro II,
Flashpro III
PD78F4216Y
μ
V
PP
V
DD
RESET
RxD1 or RxD2
TxD1 or TxD2
V
SS
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