參數(shù)資料
型號: μPD42S17805L
廠商: NEC Corp.
英文描述: 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
中文描述: 3.3運(yùn)行16位動態(tài)隨機(jī)存儲器2m-word8位,江戶
文件頁數(shù): 5/36頁
文件大?。?/td> 307K
代理商: ΜPD42S17805L
μ
PD42S17805L, 4217805L
5
Input/Output Pin Functions
The
μ
PD42S17805L, 4217805L have input pins RAS, CAS, WE, OE, A0 to A10 and input/output pins I/O1 to
I/O8.
Pin name
RAS
(Row address strobe)
CAS
(Column address strobe)
A0 to A10
(Address inputs)
WE
(Write enable)
OE
(Output enable)
I/O1 to I/O8
(Data inputs/outputs)
Input/Output
Function
Input
RAS activates the sense amplifier by latching a row address and selecting a
corresponding word line.
It refreshes memory cell array of one line selected by the row address.
It also selects the following function.
CAS before RAS refresh
Input
CAS activates data input/output circuit by latching column address and
selecting a digit line connected with the sense amplifier.
Input
Address bus.
Input total 21-bit of address signal, upper 11-bit and lower 10-bit in sequence
(address multiplex method).
Therefore, one word is selected from 2,097,152-word by 8-bit memory cell
array.
In actual operation, latch row address by specifying row address and
activating RAS.
Then, switch the address bus to column address and activate CAS.
Each address is taken into the device when RAS and CAS are activated.
Therefore, the address input setup time (t
ASR
, t
ASC
) and hold time (t
RAH
, t
CAH
)
are specified for the activation of RAS and CAS.
Input
Write control signal.
Write operation is executed by activating RAS, CAS and WE.
Input
Read control signal.
Read operation can be executed by activating RAS, CAS and OE.
If WE is activated during read operation, OE is to be ineffective in the device.
Therefore, read operation cannot be executed.
Input/Output
8-bit data bus.
I/O1 to I/O8 are used to input/output data.
相關(guān)PDF資料
PDF描述
μPD4218165L 16M- bit CMOS dynamic RAMs(16M CMOS 動態(tài)RAM)
μPD42S18165L 16M-bit CMOS dynamic RAMs(16M位CMOS 動態(tài)RAM)
μPD4218165 16M- bit CMOS dynamic RAMs(16M CMOS 動態(tài)RAM)
μPD42S18165 16M- bit CMOS dynamic RAMs(16M CMOS 動態(tài)RAM)
μPD42280 2 M-Bit Field Buffer(2M位現(xiàn)場緩存)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD430 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
PD4306 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts)
PD430607 功能描述:SCR MOD ISO DUAL 600V 700A RoHS:是 類別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目,二極管:1 SCR,1 個二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)(最大):150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))(最大):95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):210A 電流 - 非重復(fù)電涌,50、60Hz (Itsm):1785A,1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK(3 + 2) 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND
PD4307 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts)
PD430807 功能描述:SCR MOD ISO DUAL 800V 700A RoHS:是 類別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目,二極管:1 SCR,1 個二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)(最大):150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))(最大):95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):210A 電流 - 非重復(fù)電涌,50、60Hz (Itsm):1785A,1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK(3 + 2) 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND