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參數(shù)資料
| 型號： | μPC8129GR |
| 廠商： | NEC Corp. |
| 英文描述： | Silicon MMIC Frequency DownConverter(下變頻轉(zhuǎn)換器芯片) |
| 中文描述： | 硅單片頻率下變頻（下變頻轉(zhuǎn)換器芯片） |
| 文件頁數(shù)： | 5/28頁 |
| 文件大小： | 587K |
| 代理商： | ΜPC8129GR |
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Data Sheet P12781EJ2V0DS00
5
μ
PC8129GR
ELECTRICAL CHARACTERISTICS (1)
Conditions (unless otherwise specified):
T
A
= +25 °C, V
CC
= 3 V, V
PS
= 3 V, R
PS
= 1 k
, V
AGC
= 3 V, R
AGC
= 10 k
I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias (Q) = Vbias (Qb) = 1.5 V)
f
I/Qin
= 67.7 kHz, V
I/Qin
= 500 mV
P-P
(single ended input, Ib = Qb = 0 mV
P-P
)
Modulation Pattern: <0000>
f
LO1in
= 500 MHz, P
LO1in
= –10 dBm
f
LO2in
= 1150 MHz, P
LO2in
= –10 dBm
f
UPCONin
= f
MODout
= f
LO1in
/2 + f
I/Qin
= 250 MHz + f
I/Qin
f
RFout
= 900 MHz – f
I/Qin
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
UP CONVERTER + QUADRATURE MODULATOR TOTAL
Total Circuit Current
I
CC(TOTAL)
20
28
37
mA
No input signal
Total Circuit Current at Power Save
Mode
I
CC(PS)TOTAL1
0.6
10
μ
A
V
PS
≤
0.5 V
Total Output Power
P
RFout
–8
–5
–2
dBm
Local Oscillator Carrier Leakage
LoL
–40
–26.5
dBc
f
LoL
= f
LO2
– f
LO1
/2
Image Rejection (Side Band Leak)
ImR
–30
–26.5
dBc
AGC Gain Control Rang
GCR
28
40
dB
V
AGC
= 2.5 V to 0 V
Power Save Rise Time
T
PS
(rise)
2.0
5.0
μ
s
V
PS
(Low)
→
V
PS
(High)
Power Save Fall Time
T
PS
(fall)
2.0
5.0
μ
s
V
PS
(High)
→
V
PS
(Low)
UP CONVERTER BLOCK
Circuit Current at Power Save Mode
I
CC(PS)
(Up con.)
5.0
μ
A
V
PS
≤
0.5 V
QUADRATURE MODULATOR BLOCK
Circuit Current at Power Save Mode
I
CC(PS)
(MOD)
5.0
μ
A
V
PS
≤
0.5 V
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