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參數(shù)資料
| 型號(hào)： | μPC3210TB |
| 廠商： | NEC Corp. |
| 英文描述： | 5 V, Super Minimold Silicon MMIC Amplifier(單片微波放大器芯片) |
| 中文描述： | 5伏，硅超Minimold MMIC放大器（單片微波放大器芯片） |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ΜPC3210TB |
Data Sheet P13593EJ2V0DS00
4
μ
PC3210TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
V
CC
T
A
= +25 °C
6.0
V
Circuit Current
I
CC
T
A
= +25 °C
30
mA
Total Power Dissipation
P
D
Mounted on double sided copper clad
50
×
50
×
1.6 mm epoxy glass PWB (T
A
= +85 °C)
200
mW
Operating Ambient Temperature
T
A
–40 to +85
°C
Storage Temperature
T
stg
–55 to +150
°C
Input Power Level
P
in
T
A
= +25 °C
+10
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Operating Ambient Temperature
T
A
–40
+25
+85
°C
ELECTRICAL OPERATING CONDITIONS (T
A
= +25°C, V
CC
= 5.0 V, Z
S
= Z
L
= 50
)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
I
CC
No signals
11.5
15.0
19.5
mA
Power Gain
G
P
f = 1.5 GHz
18
20
–
dB
Noise Figure
NF
f = 1.5 GHz
–
3.4
4.4
dB
Upper Limit Operating
Frequency
f
u
3 dB down below from gain at
f = 0.1 GHz
2.05
2.3
–
GHz
Isolation
ISL
f = 1.5 GHz
29
34
–
dB
Input Return Loss
RL
in
f = 1.5 GHz
10
14.5
–
dB
Output Return Loss
RL
out
f = 1.5 GHz
7
11
–
dB
Maximum Output Level
P
O (sat)
f = 1.5 GHz, P
in
= 0 dBm
+0.5
+3.5
–
dBm
Gain Flatness
G
P
f = 0.1 GHz to 2.05 GHz
–
±
1.0
–
dB
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