參數(shù)資料
型號: μPA813T
廠商: NEC Corp.
英文描述: NPN Silicon Epitaxial Transistor(NPN 外延晶體管)
中文描述: NPN硅外延晶體管(npn型外延晶體管)
文件頁數(shù): 3/8頁
文件大?。?/td> 46K
代理商: ΜPA813T
μ
PA813T
3
0.1
Frequency f (GHz)
0
5
10
15
20
3 V
1
C
o
Collector to Base Voltage V
CB
(V)
C
ob
- V
CB
Characteristics
0.1
0.2
0.5
0.7
2.0
2
5
7
10
20
I
2
2
l S
21e
l
2
- f Characteristics
0.2
0.5
1.0
2.0
5.0
I
C
= 5 mA
25
1.0
f = 1 MHz
0.5
G
T
Collector Current I
C
(mA)
f
T
- I
C
Characteristics
0
f = 1 GHz
2
4
6
8
1
2
5
10 20
50
100
3 V
V
CE
= 5 V
0.5
I
2
2
Collector Current I
C
(mA)
l S
21e
l
2
- I
C
Characteristics
0
f = 1 GHz
4
8
12
16
1
2
5
10
20
50
3 V
V
CE
= 5 V
0
C
C
Collector to Emitter Voltage V
CE
(V)
I
C
- V
CE
Characteristics
2
4
6
8
10
10
20
30
D
F
Collector Current I
C
(mA)
h
FE
- I
C
Characteristics
20
100
200
50
10
0.5
1
2
5
10
20
50
V
CE
= 5 V
V
CE
= 5 V
I
B
= 160 A
140 A
100 A
40 A
20 A
120 A
80 A
60 A
相關(guān)PDF資料
PDF描述
μPA814TC NPN Silicon RF Twin Transistor(NPN射頻晶體管)
μPA814T Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor(微波低噪聲放大器NPN硅外延晶體管)
μPA821TC NPN Silicon RF Twin Transistor(NPN射頻晶體管)
μPA821TF High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
μPA828TF High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
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