參數(shù)資料
型號： μPA813T
廠商： NEC Corp.
英文描述： NPN Silicon Epitaxial Transistor(NPN 外延晶體管)
中文描述： NPN硅外延晶體管（npn型外延晶體管）
文件頁數(shù)： 2/8頁
文件大?。?/td> 46K
代理商： ΜPA813T
μ
PA813T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
Collector to Emitter
Saturation Voltage
V
CE (sat)
h
FE
= 10, I
C
= 5 mA
0.5
V
DC Current Gain
h
FE
V
CE
= 5 V, I
C
= 5 mA
Note 1
60
200
Gain Bandwidth Product
f
T
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
5.5
GHz
Feed-back Capacitance
C
re
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
0.7
0.9
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
5
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 5 V, I
C
= 5 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
μ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
FB
GB
Marking
73T
74T
h
FE
Value
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
50
100
150
50
0
120 mW
160 mW
100
150
0
V
CE
= 5 V
8
16
24
0.2
0.4
0.6
0.8
1.0
C
C
I
C
- V
BE
Characteristics
Base to Emitter Voltage V
BE
(V)
P
T
- T
A
Characteristics
T
T
(
Ambient Temperature T
A
(°C)
Free Air
Pe Eemen
相關PDF資料
PDF描述
μPA814TC NPN Silicon RF Twin Transistor(NPN射頻晶體管)
μPA814T Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor(微波低噪聲放大器NPN硅外延晶體管)
μPA821TC NPN Silicon RF Twin Transistor(NPN射頻晶體管)
μPA821TF High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
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