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參數(shù)資料
| 型號： | ZXTDE4M832TA |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 70V V(BR)CEO | 2.5A I(C) | LLCC |
| 中文描述： | 晶體管|晶體管|一對|互補| 70V的五（巴西）總裁| 2.5AI（丙）| LLCC |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 314K |
| 代理商： | ZXTDE4M832TA |
ZXTDE4M832
ISSUE 1 - JUNE 2002
6
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-70
-150
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-70
-125
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-7.5
-8.5
V
I
E
=-100 A
V
CB
=-55V
V
EB
=-6V
V
CE
=-55V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1.0A, I
B
=-100mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
I
=-50mA, V
CE
=-10V
f=100MHz
Collector Cut-Off Current
-25
nA
Emitter Cut-Off Current
-25
nA
Collector Emitter Cut-Off Current
-25
nA
Collector-Emitter Saturation
Voltage
-35
-135
-140
-175
-50
-200
-220
-260
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
0.94
1.05
V
Base-Emitter Turn-On Voltage
0.78
1.00
V
Static Forward Current Transfer
Ratio
300
300
175
40
470
450
275
60
10
Transition Frequency
f
T
150
180
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
14
20
pF
V
CB
=-10V, f=1MHz
V
CC
=-50V, I
=-1A
I
B1
=I
B2
=-50mA
Turn-On Time
40
ns
Turn-Off Time
700
ns
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions.
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