參數(shù)資料
型號: ZXTDE4M832
文件頁數(shù): 4/8頁
文件大?。?/td> 314K
代理商: ZXTDE4M832
ZXTDE4M832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
180
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
80
110
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7.5
8.2
V
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CE
=65V
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
=50mA*
I
C
=1A, I
B
=20mA
I
C
=1.5A, I
B
=50mA
I
C
=3.5A, I
B
=300mA
I
C
=3.5A, I
B
=300mA*
I
C
=3.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
=50mA, V
CE
=10V
f=100MHz
Collector Cut-Off Current
25
nA
Emitter Cut-Off Current
25
nA
Collector Emitter Cut-Off Current
25
nA
Collector-Emitter Saturation
Voltage
15
45
145
160
240
20
60
185
200
325
mV
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
1.09
1.175
V
Base-Emitter Turn-On Voltage
0.96
1.05
V
Static Forward Current Transfer
Ratio
200
300
110
60
20
450
450
170
90
30
10
900
Transition Frequency
f
T
100
160
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
11.5
18
pF
V
CB
=10V, f=1MHz
V
CC
=10V, I
=1A
I
B1
=I
B2
=25mA
Turn-On Time
86
ns
Turn-Off Time
1128
ns
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions.
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