參數(shù)資料
型號(hào): ZXTDCM832TC
英文描述: TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 4A I(C) | LLCC
中文描述: 晶體管|晶體管|一對(duì)|叩| 50V五(巴西)總裁| 4A條一(c)| LLCC
文件頁數(shù): 4/6頁
文件大?。?/td> 212K
代理商: ZXTDCM832TC
ZXTDCM832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
190
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7.5
8.2
V
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=40V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
=50mA, V
CE
=10V
f=100MHz
Collector Cut-Off Current
25
nA
Emitter Cut-Off Current
25
nA
Collector Emitter Cut-Off Current
25
nA
Collector-Emitter Saturation
Voltage
10
70
145
115
225
270
20
100
200
220
300
320
mV
mV
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
1.00
1.05
V
Base-Emitter Turn-On Voltage
0.94
1.00
V
Static Forward Current Transfer
Ratio
200
300
200
100
400
450
400
225
40
Transition Frequency
f
T
100
165
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
12
20
pF
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Turn-On Time
170
ns
Turn-Off Time
750
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
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