參數(shù)資料
型號(hào): ZXTD3M832
文件頁數(shù): 4/6頁
文件大?。?/td> 135K
代理商: ZXTD3M832
ZXTD3M832
S E M IC O N D U C T O R S
ISSUE 1 - J UNE 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-50
-80
V
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-40V
V
EB
=-6V
V
CES
=-32V
I
C
=-0.1A, I
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-2.5A, I
B
=-250mA*
I
C
=-2.5A, I
B
=-250mA*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=2V*
I
C
=-3A, V
CE
=-2V*
I
=-50mA, V
CE
=-10V
f=100MHz
Collector-Emitter Breakdown Voltage
-40
-70
V
Emitter-Base Breakdown Voltage
-7.5
-8.5
V
Collector Cut-Off Current
-25
nA
Emitter Cut-Off Current
-25
nA
Collector Emitter Cut-Off Current
-25
nA
Collector-Emitter Saturation Voltage
-25
-150
-195
-210
-260
-40
-220
-300
-300
-370
mV
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
-0.97
-1.05
V
Base-Emitter Turn-On Voltage
-0.89
-0.95
V
Static Forward Current Transfer Ratio
300
300
180
60
12
480
450
290
130
22
Transition Frequency
f
T
150
190
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
19
25
pF
V
CB
=-10A, f=1MHz
V
CC
=-15V, I
=-0.75A
I
B1
=I
B2
=-15mA
Turn-On Time
40
ns
Turn-Off Time
435
ns
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
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