參數(shù)資料
型號(hào)： ZXMP3F37N8TA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 6400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOP-8
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 298K
代理商： ZXMP3F37N8TA
ZXMP3F37N8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V(BR)DSS
-30
V
ID = -250μA, VGS=0V
Zero Gate voltage Drain
current
IDSS
-1.0
A
VDS=-30V, VGS=0V
Gate-Body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source threshold
voltage
VGS(th)
-1.3
-2.5
V
ID= -250μA, VDS=VGS
Static Drain-Source
on-state resistance
(*)
RDS(on)
0.025
0.041
VGS= -10V, ID= -7.1A
VGS= -4.5V, ID= -5.5A
Forward
Transconductance
(*) ()
gfs
18.6
S
VDS= -15V, ID= -7.1A
Dynamic
()
Input capacitance
Ciss
1678
pF
Output capacitance
Coss
303
pF
Reverse transfer
capacitance
Crss
178
pF
VDS= -15V, VGS=0V
f=1MHz
Switching
() ()
Turn-on-delay time
td(on)
3.5
ns
Rise time
tr
4.9
ns
Turn-off delay time
td(off)
44
ns
Fall time
tf
28
ns
VDD= -15V, VGS= -10V
ID= -1A
RG 6.0Ω,
Gate charge
Total Gate charge
Qg
31.6
nC
Gate-Source charge
Qgs
4.3
nC
Gate-Drain charge
Qgd
6.2
nC
VDS= -15V, VGS= -10V
ID= -7.1A
Source–Drain diode
Diode forward voltage
(*)
VSD
-0.80
-1.2
V
IS= -1.7A,VGS=0V
Reverse recovery time
()
trr
16.2
ns
Reverse recovery charge
()
Qrr
10
nC
IS= -2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
()Switching characteristics are independent of operating junction temperature.
()For design aid only, not subject to production testing
Issue 1 - August 2008
4
Diodes Incorporated 2008
www.zetex.com
www.diodes.com
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