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| 型號： | ZXMNS3BM832(2) |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 125K |
| 代理商： | ZXMNS3BM832(2) |
ZXMNS3BM832
DRAFT ISSUE B - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
MOSFET
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
30
V
I
D
=250
μ
A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
I
D
=250 A, V
DS
= V
GS
V
GS
=4.5V, I
D
=1.5A
V
GS
=2.5V, I
D
=1.3A
V
DS
=15V,I
D
=1.5A
Zero Gate Voltage Drain Current
1
μ
A
nA
Gate-Body Leakage
100
Gate-Source Threshold Voltage
0.7
V
S
Static Drain-Source On-State Resistance
(1)
0.13
0.17
0.18
0.25
Forward Transconductance (1)(3)
g
fs
t.b.a
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
314
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
40
pF
Reverse Transfer Capacitance
23
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
1.1
ns
V
DD
=15V, I
D
=1A
R
G
=6.0
, V
GS
=4.5V
Rise Time
1.5
ns
Turn-Off Delay Time
5.1
ns
Fall Time
2.1
ns
Total Gate Charge
2.9
nC
V
DS
=15V,V
GS
=4.5V,
I
D
=1.5A
Gate-Source Charge
0.6
nC
Gate-Drain Charge
0.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=1.7A,
V
GS
=0V
T
J
=25°C, I
F
=2.7A,
di/dt= 100A/ s
Reverse Recovery Time (3)
t
rr
Q
rr
17.7
ns
Reverse Recovery Charge (3)
13.0
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
V
F
40
60
V
I
R
=300 A
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=1000mA,T
a
=100°C
V
R
=30V
f=1MHz,V
R
=25V
switched from
I
F
=500mA to I
R
=500mA
Measured at I
R
=50mA
Forward Voltage
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
Reverse Current
I
R
C
D
t
rr
50
100
A
Diode Capacitance
25
pF
Reverse Recovery Time
12
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES:
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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