參數(shù)資料
型號： ZXMHC6A07T8(2)
文件頁數(shù)： 4/10頁
文件大?。?/td> 285K
代理商： ZXMHC6A07T8(2)
ZXMHC6A07T8
PROVISIONAL ISSUE E - MARCH 2004
S E M IC O N D U C T O R S
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
60
V
I
D
=250μA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
=250μA, V
DS
= V
GS
V
GS
=10V, I
D
=1.8A
V
GS
=4.5V, I
D
=1.3A
V
DS
=15V,I
D
=1.8A
Zero Gate Voltage Drain Current
1
μA
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1
3.0
V
S
Static Drain-Source On-State Resistance
(1)
0.300
0.450
Forward Transconductance (1)(3)
g
fs
2.3
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
166
pF
V
=40V, V
GS
=0V,
f=1MHz
Output Capacitance
19.5
pF
Reverse Transfer Capacitance
8.7
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
1.8
ns
V
DD
=30V, I
D
=1.8A
R
G
6.0
, V
GS
=10V
Rise Time
1.4
ns
Turn-Off Delay Time
4.9
ns
Fall Time
2.0
ns
Gate Charge
1.65
nC
V
DS
=30V,V
GS
=5V,
I
D
Total Gate Charge
Q
g
Q
gs
Q
gd
3.2
nC
V
DS
=30V,V
GS
=10V,
I
D
=1.8A
Gate-Source Charge
0.67
nC
Gate-Drain Charge
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.85
0.95
V
T
J
=25°C, I
S
=0.45A,
V
GS
=0V
T
J
=25°C, I
F
=1.8A,
di/dt= 100A/μs
Reverse Recovery Time (3)
t
rr
Q
rr
20.5
ns
Reverse Recovery Charge (3)
21.3
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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