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參數(shù)資料
| 型號： | ZXM62P03G |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 286K |
| 代理商： | ZXM62P03G |
ZXM62P03G
ISSUE 2 - DECEMBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.15
0.23
Forward Transconductance (1)(3)
g
fs
1.1
S
V
DS
=-10V,I
D
=-0.8A
DYNAMIC
(3)
Input Capacitance
C
iss
330
pF
V
=-25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
45
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.8
ns
V
DD
=-15V, I
D
=-1.6A
R
G
=6.2
,
V
GS
=-10V
Rise Time
t
r
6.4
ns
Turn-Off Delay Time
t
d(off)
13.9
ns
Fall Time
t
f
10.3
ns
Total Gate Charge
Q
g
10.2
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.6A
Gate-Source Charge
Q
gs
1.5
nC
Gate-Drain Charge
Q
gd
3
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
-0.95
V
T
J
=25 C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
19.9
ns
T
=25 C, I
=-1.6A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
13
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300μ s. Duty cycle
2% .
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