參數(shù)資料
型號： ZVP3306FTA
英文描述： TRANSISTOR SOT23 SMD MOSFET
中文描述： 晶體管SOT23封裝貼片MOSFET的
文件頁數(shù)： 1/2頁
文件大小： 112K
代理商： ZVP3306FTA
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995
%
FEATURES
*
100 Volt V
DS
*
R
DS(on)
=20
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVN3310F
MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
75
mA
-1.2
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
μ
A
μ
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP3310F
D
G
S
3 - 436
相關(guān)PDF資料
PDF描述
ZVP3310B TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 300MA I(D) | TO-39
ZVP4424C Obsolete - alternative part: ZVP4424A
ZW60512 Analog IC
ZW61212 Analog IC
ZW62412 Analog IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVP3306FTA-CUT TAPE 制造商:DIODES 功能描述:ZVP3306F Series 60 V 14 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223
ZVP3306FTC 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP3310 制造商:ZETEX 制造商全稱:ZETEX 功能描述:P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVP3310A 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP3310ASTOA 功能描述:MOSFET P-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。