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參數(shù)資料
| 型號： | ZTX653DCSM |
| 英文描述： | NPN Dual Transistor In a Hermetically Sealed Ceramic Surface Mount Package For High Reliability Application(Vcbo:120V,Vceo:100V,Vebo:5V)(雙NPN晶體管（高可靠性、氣密陶瓷表貼封裝,Vcbo:120V,Vceo:100V,Vebo:5V)) |
| 中文描述： | npn型雙晶體管在一個(gè)密封陶瓷表面貼裝封裝，高可靠性的應(yīng)用（Vcbo：120伏特，Vceo：100V的，Vebo：5V的）（雙npn型晶體管（高可靠性，氣密陶瓷表貼封裝，Vcbo：120伏特，Vceo： 100V的，Vebo：5V的）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 14K |
| 代理商： | ZTX653DCSM |
ZTX653DCSM
Prelim. 1/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
Transition Frequency
Output Capacitance
Switching Times
Switching Times
Test Conditions
I
C
= 100mA
V
CE
= 5V
V
CB
= 10V
f = 1.0MHz
I
C
= 500mA V
CC
= 10V
I
B1
=I
B2
=50mA
Min.
140
Typ.
175
Max.
Unit
MHz
pF
Parameter
Collector
–
Base Breakdown Voltage
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Test Conditions
I
C
= 100
μ
A
I
C
= 10mA
I
E
= 100
μ
A
V
CB
= 100V
Min.
120
100
5
Typ.
Max.
Unit
V
V
V
T
C
= 100
°
C
V
EB
= 4V
I
C
= 1A
I
C
= 2A
I
C
= 1A
I
C
= 1A
I
C
= 50mA
I
C
= 500mA
I
C
= 1A
I
C
= 2A
I
B
= 100mA*
I
B
= 200mA*
I
B
= 100mA*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector
–
Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector
–
Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
Base
–
Emitter Saturation Voltage
Base
–
Emitter Turn-On Voltage
H
FE
DC Current Gain
0.1
10
0.1
0.3
0.5
1.25
1.0
0.13
0.23
0.9
0.8
200
200
110
55
70
100
55
25
300
μ
A
μ
A
V
V
V
—
f
T
C
obo
T
on
T
off
f = 100MHz
30
80
1200
ns
DYNAMIC CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
* Pulse test tp = 300ms ,
δ ≤
2%
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|---|---|
| ZTX653DCSM_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS |
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| ZTX653M1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | SO |
| ZTX653STOA | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX653STOB | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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