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參數(shù)資料
| 型號： | ZNI1000TC |
| 廠商： | Diodes Inc |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 159K |
| 描述： | IC TEMP SENSOR NI1000 SOT23-3 |
| 標準包裝： | 10,000 |
| 系列： | * |
ZNI1000
Issue 5 - June 2007
3
www.zetex.com
?Zetex Semiconductors plc 2007
Characteristics according to DIN43760
Resistance at a given temperature
R(T) = R0 x (1 + A x T + B x T
2
+ C x T
4
+ D x T
6
)
Formula for temperature at a given resistance
coefficients:
A = -412.6
B = 140.41
C = 0.00764
D = -6.25 x 10
-17
E = -1.25 x 10
-24
Self heating
For accurate temperature measurement it's recommended to choose a small current in order to
avoid self heating of the resistor. The temperature failure caused by the measurement current can
be calculated with:
T = P/EK
where P = I?* R is the heat power caused by the measurement current and EK is the self heating
coefficient.
The self heating coefficient for the Ni1000-SOT is:
EK = (1.7 ?0.3) mW/K (Air: 23癈; no air flow).
R0
Resistance at 0癈
B
6.650 x 10
-6
T
Temperature in 癈
C
2.805 x 10
-11
A
5.485 x 10
-3
D
-2.000 x 10
-17
R
( ) A B 1 C R
?/DIV>
+
?/DIV>
D R
5
?/DIV>
E R
7
?/DIV>
+
+
+
=
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