參數(shù)資料
型號(hào): YG801C04R
廠商: FUJI ELECTRIC CO LTD
元件分類: 整流器
英文描述: SCHOTTKY BARRIER DIODE
中文描述: 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: SC-67, TO-220F15, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 45K
代理商: YG801C04R
YG801C04R
(40V / 5A TO-22OF15)
Characteristics
0.1
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
1020
3040
50
10
-3
10
-2
10
-1
10
0
10
1
Tj=150
oC
Tj=25
o
C
Tj=100
o
C
Tj=125
oC
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Per 1element
DC
Square wave
λ=180o
Sine wave
λ=180o
Square wave
λ=120
o
Square wave
λ=60o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
1020304050
0.0
0.5
1.0
1.5
2.0
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
0
1234
56
78
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
O
C)
Io
Average Output Current
(A)
360°
Io
VR=30V
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
λ
α
λ
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