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參數(shù)資料
| 型號(hào)： | XX1000 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| 中文描述： | 7.5-25.0/15.0-50.0 GHz的砷化鎵單片有源倍頻器 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 507K |
| 代理商： | XX1000 |
Page 4 of 6
App Note [1] Biasing
-
It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=5.0V with Id1=80mA
and Id2=140mA and Vss=-5.0V with Iss=50mA. XX1000 provides good performance at reduced bias with Vss=-2.0V and Iss=25mA.
Maximum output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at
high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and
Vg2=0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2, Vss and Vg1, 2) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
X1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2006 - Rev 10-Apr-06
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XX1001-BD | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000V | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000W | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-EV1 | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-QK | 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XX1000-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| XX1000-BD_0708 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| XX1000-BD-000V | 制造商:M/A-COM Technology Solutions 功能描述:FREQUENCY MULTIPLIER |
| XX1000-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| XX1000-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
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