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參數(shù)資料
| 型號(hào)： | XX1000-QT-0G00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| 中文描述： | 7500 MHz - 22500 MHz RF/MICROWAVE FREQUENCY DOUBLER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, QFN-16 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 620K |
| 代理商： | XX1000-QT-0G00 |
Page 5 of 7
Pin
3
5
6
7
10
13
15
Description
RF In
Vg1
Vss
Vg2
RF Out
Vd2
Vd1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
App Note [1] Biasing
-
It is recommended to separately bias each doubler stage with Vd(1,2)=5.0V with Id1=80mA and Id2=140mA
and Vss=-5.0V with Iss=50mA. XX1000-QT provides good performance at reduced bias with Vss=-2.0V and Iss=25mA. Maximum
output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at high levels
of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to
maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and Vg2=0.0V.
Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to
ensure negative gate bias is available before applying the positive drain supply.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
X1000-QT
April 2006 - Rev 28-Apr-06
Functional Schematic
Top View
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| XX1000 | 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| XX1001-BD | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000V | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000W | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XX1000-QT-0G0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX10015 | 制造商:Wakefield Thermal Solutions 功能描述: |
| XX1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC |
| XX1001-BD_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC |
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