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參數(shù)資料
| 型號： | XU1006-QB-0L0T |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 通信及網(wǎng)絡 |
| 英文描述： | 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, QCC28 |
| 封裝： | 7 X 7 MM, ROHS COMPLIANT, QFN-28 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 309K |
| 代理商： | XU1006-QB-0L0T |
36.0-42.0 GHz GaAs Transmitter
QFN, 7x7 mm
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MTTF
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
App Note [1] Biasing
- App Note [1] Biasing - The device is operated by biasing VD=4.0V with ID=240mA. Additionally, a mixer and doubler
bias are also required with VG2=-0.5V. Adjusting Vg2 above or below this value can adversely affect conversion gain, image rejection and
intercept point performance. The VC bias pin controls an integrated attenuator where VC=-1.3 V provides the minimum attenuation and
VC = 0.0 V provides the maximum attenuation (approximately 25 dB).
It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is VG1= -0.4V.
Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
Typical Application
Mimix Broadband's 36.0-42.0 GHz XU1006-QB GaAs Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM. The transmitter can be used in upper and lower sideband applications from 36.0-42.0 GHz.
Mixer
Mimix
Broadband MMIC-based 35.0-45.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 42 GHz)
RF OUT
37.0-39.5 GHz
XU1006-QB
XP1005
Coupler
IF In
2 GHz
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Buffer
X
X2
XU1006-QB, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
55
65
75
85
95
Temperature (°C)
M
Bias Conditions:
Vd=4.0V, Id=240 mA
October 2006 - Rev 19-Oct-06
U1006-QB
相關PDF資料 |
PDF描述 |
|---|---|
| XU1006-QB-EV1 | 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm |
| XU1007-BD | 27.0-36.0 GHz GaAs MMIC Transmitter |
| XU1007-BD-000V | 27.0-36.0 GHz GaAs MMIC Transmitter |
| XU1007-BD-EV1 | 27.0-36.0 GHz GaAs MMIC Transmitter |
| XU1009-BD | 18.0-36.0 GHz GaAs MMIC Transmitter |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XU1006-QB-0N00 | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1006-QB-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:36.0-42.0 GHz GaAs Transmitter SMT, 7x7 mm |
| XU1006-V | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1007-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-36.0 GHz GaAs MMIC Transmitter |
| XU1007-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-36.0 GHz GaAs MMIC Transmitter |
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