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參數(shù)資料
| 型號： | XU1005-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 10.0-18.0 GHz GaAs MMIC Transmitter |
| 中文描述： | 10.0-18.0 GHz的砷化鎵單片發(fā)射機 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 373K |
| 代理商： | XU1005-BD-EV1 |
Page 5 of 8
MTTF Tables (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=Vd2=Vd3=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA, Is1=140mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V,
Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA and Is1=140mA. Additionally, a mixer is also required with Vg1=-0.6V.
Adjusting Vg1 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point
performance. Gain control can be adjusted by varying Vg2,3 from 0.0 to -1.2 V with 0.0V providing minimum
attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active biasing to keep the
currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this
is -0.2V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or
gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also
recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3, Vss, and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF)
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
10.0-18.0 GHz GaAs MMIC
Transmitter
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 01-Mar-07
U1005-BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XU1005-QD | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N00 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N0T | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-EV1 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1006-QB | 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1005-QD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N00 | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1005-QD-0N0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
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