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參數(shù)資料
| 型號： | XP6543 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | XP6543 |
1
Publication date: June 2003
SJJ00217BED
Composite Transistors
XP06543
Silicon NPN epitaxial planar type
For low noise amplification
■
Features
High transition frequency f
T
Two elements incorporated into one package (Each transistor is
separated)
■
Basic Part Number
2SC3904
×
2
Unit: mm
0.12
+0.05
Internal Connection
Marking Symbol: 9Y
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
I
EBO
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
1
Forward current transfer ratio
*
h
FE
50
120
300
Transition frequency
*
f
T
NF
7.0
8.5
GHz
Noise figure
2.2
3.0
dB
Collector output capacitance
(Common base, input open circuited)
C
ob
0.6
1.0
pF
Forward transfer gain
*
S
21e
2
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
7
9
dB
Maximum unilateral power gain
*
G
UM
10
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
■
Absolute Maximum Ratings
T
a
=
25
°
C
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
4
Tr1
Tr2
5
6
1
3
2
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
15
V
Collector-emitter voltage (Base open)
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
P
T
65
mA
Total power dissipation
150
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
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