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4
Composite Transistors
XP611FH
Characteristics charts of Tr2
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
0
0
–12
–2
–10
–4
–8
–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–0.5mA
–0.3mA
–0.4mA
–0.2mA
–0.1mA
–0.01
–1
–3
–0.1
–1
–10
–100
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
240
200
160
120
80
40
–1
–3
–10
–30
–100
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
–1
6
5
4
3
2
1
–3
–10
–30
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
–0.01
–0.1 –0.3
–0.1
–1
–10
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
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相關(guān)代理商/技術(shù)參數(shù) |
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| XP6210 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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| XP6212 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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| XP6214 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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