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參數(shù)資料
| 型號(hào)： | XP4506 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI6-G1, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | XP4506 |
1
Composite Transistors
XP4506
Silicon NPN epitaxial planer transistor
For amplification of low frequency output
I
Features
G
High emitter to base voltage V
EBO
.
G
High forward current transfer ratio h
FE
.
G
Low ON resistor R
on
.
I
Basic Part Number of Element
G
2SD1915F
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
EN
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
50
V
Collector to emitter voltage
20
V
Emitter to base voltage
25
V
Collector current
300
mA
Peak collector current
500
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
I
CBO
I
EBO
h
FE
V
BE
V
CE(sat)
f
T
C
ob
R
on*1
I
C
= 1mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
V
CE
= 2V, I
C
= 4mA
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 6V, I
E
= –4mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
V
Collector cutoff current
0.1
μ
A
μ
A
Emitter cutoff current
0.1
Forward current transfer ratio
500
2500
Base to emitter voltage
0.6
V
Collector to emitter saturation voltage
0.1
V
Transition frequency
80
MHz
Collector output capacitance
7
pF
ON Resistance
1
*1
R
on
measuring circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
1k
V
A
V
V
V
B
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2) 6 : Collector (Tr1)
4 : Emitter (Tr2)
5 : Base (Tr2)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
–
1
6
5
Tr2
Tr1
2
3
4
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