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參數(shù)資料
| 型號(hào)： | XP4286 |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|的SOT - 363 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | XP4286 |
2
Composite Transistors
I
Electrical Characteristics
(Ta=25C)
G
Tr1
G
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
–50
V
Collector to emitter voltage
–50
V
Collector cutoff current
– 0.1
μ
A
μ
A
I
CEO
I
EBO
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
– 0.5
Emitter cutoff current
– 0.01
mA
Forward current transfer ratio
h
FE
V
CE(sat)
V
OH
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
160
460
Collector to emitter saturation voltage
– 0.25
V
Output voltage high level
–4.9
V
Output voltage low level
V
OL
f
T
R
1
– 0.2
V
Transition frequency
80
MHz
Input resistance
–30%
10
+30%
k
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
μ
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
CBO
I
CEO
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
50
V
Collector cutoff current
0.1
μ
A
μ
A
0.5
Emitter cutoff current
I
EBO
h
FE
V
CE(sat)
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
V
CB
= 10V, I
E
= –2mA, f = 200MHz
0.01
mA
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
0.25
V
Output voltage high level
V
OH
V
OL
f
T
4.9
V
Output voltage low level
0.2
V
Transition frequency
150
MHz
Input resistance
R
1
–30%
10
+30%
k
XP04315
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