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參數(shù)資料
| 型號(hào)： | XP4116 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | XP4116 |
1
Publication date: February 2004
SJJ00164BED
Composite Transistors
XP04114
(XP4114)
Silicon PNP epitaxial planar type
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2114 (UN2114)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: BK
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
Tr1
Tr2
5
6
1
3
2
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
0.5
0.2
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
mA
Forward current transfer ratio
80
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
+
30%
V
Input resistance
R
1
30%
10
k
Resistance ratio
R
1
/ R
2
f
T
0.17
0.21
0.25
Transition frequency
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
V
Collector current
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP04117 | Composite Device - Composite Transistors |
| XP4117 | Composite Device - Composite Transistors |
| XP04112 | Composite Device - Composite Transistors |
| XP4112 | Composite Device - Composite Transistors |
| XP04114 | Composite Device - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP42 | 制造商:SAIA - BURGESS ELECTRONICS INC. 功能描述:Catalogue / XP42 |
| XP4210 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XP4211 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XP4212 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| XP4213 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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