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參數(shù)資料
| 型號： | XP151A12A2MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 63K |
| 代理商： | XP151A12A2MR |
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Electrical Characteristics
DC characteristics
Ta=25
°
C
UNITS
μ
A
μ
A
V
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
SYMBOL
Idss
Igss
Vgs (off )
CONDITIONS
Vds = 20 , Vgs = 0V
Vgs =
±
12 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 0.5A , Vgs = 4.5V
Id = 0.5A , Vgs = 2.5V
MIN
TYP
MAX
10
±
10
1.4
0.1
0.16
0.7
Drain-Source On-state Resistance
( note )
0.075
0.12
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic characteristics
Ta=25
°
C
UNITS
pF
pF
pF
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
MIN
TYP
180
120
45
MAX
Vds = 10V , Vgs = 0V
f = 1 MHz
Switching characteristics
Ta=25
°
C
UNITS
ns
ns
ns
ns
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
MIN
TYP
10
15
50
45
MAX
Vgs = 5V , Id = 0.5A
Vdd = 10V
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP
MAX
UNITS
Id = 0.5A , Vds = 10V
| Yfs |
Rds ( on )
S
3.3
°
C / W
250
Rth ( ch - a )
Vf
If = 1A , Vgs = 0V
V
0.8
1.1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| XP151A12A2MR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP151A12A2MR_12 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP151A12A2MR-G | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP151A12A2MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP151A13 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:N-Channel Power |
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