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參數(shù)資料
| 型號(hào)： | XP06435 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type For high-frequency amplification |
| 中文描述： | 30 mA, 20 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI6-G1, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | XP06435 |
1
Publication date: March 2004
SJJ00213BED
Composite Transistors
XP06435
(XP6435)
Silicon PNP epitaxial planar type
For high-frequency amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SA1022
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: 7W
■
Electrical Characteristics
T
a
=
25
°
C
±
2
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
Tr1
Tr2
5
6
1
3
2
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CB
=
10 V, I
E
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
1 mA, f
=
5 MHz
V
CB
=
10 V, I
E
=
1 mA, f
=
2 MHz
V
CE
=
10 V, I
C
=
1 mA, f
=
10.7 MHz
0.7
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
100
10
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
50
220
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.1
V
Transition frequency
150
MHz
Noise figure
NF
2.8
dB
Reverse transfer impedance
Z
rb
C
re
22
pF
Reverse transfer capacitance
(Common emitter)
1.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
20
5
30
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
mA
Total power dissipation
P
T
T
j
T
stg
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP06435(XP6435) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XP0643500L | 功能描述:TRANS ARRAY PNP/PNP SMINI-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XP06501 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-363 |
| XP06501(XP6501) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
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