參數(shù)資料
型號： XP04314
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： Composite Device - Composite Transistors
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, SMINI6-G1, SC-88, 6 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 109K
代理商： XP04314
XP04314
2
SJJ00179BED
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
160
40
120
80
0
250
100
200
50
150
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
0.2
mA
Forward current transfer ratio
h
FE
80
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
V
Input resistance
30%
10
+
30%
k
Resistance ratio
R
1
/ R
2
0.17
0.21
0.25
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
0.1
0.5
0.2
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE
80
Collector-emitter saturation voltage
V
CE(sat)
V
OH
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
+
30%
V
Input resistance
R
1
30%
10
k
Resistance ratio
R
1
/ R
2
0.17
0.21
0.25
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
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相關代理商/技術參數(shù)
參數(shù)描述
XP04314(XP4314) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ
XP0431400L 功能描述:TRANS ARRAY PNP/NPN W/RES S MINI RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預偏壓式 系列:- 標準包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046
XP04315 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
XP04315(XP4315) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:XP04315 (XP4315) - Composite Transistors
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