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參數(shù)資料
| 型號(hào)： | XP01531 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 2 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-88A, SMINI5-G1, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | XP01531 |
1
Composite Transistors
XP01531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC3130
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
9F
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
3
V
Collector current
50
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
r
bb
'·C
C
C
rb
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
10
V
Emitter to base voltage
3
V
Collector cutoff current
1
μ
A
μ
A
10
Forward current transfer ratio
75
200
400
Collector to emitter saturation voltage
0.5
V
Transition frequency
1.4
1.9
2.5
GHz
Collector output capacitance
0.9
1.1
pF
Collector to base parameter
11.8
13.5
ps
Common base reverse transfer capacitance
0.25
0.35
pF
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
1
5
Tr2
Tr1
2
3
4
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