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參數(shù)資料
| 型號(hào)： | XN6114 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 87K |
| 代理商： | XN6114 |
1
Publication date: December 2003
SJJ00096BED
Composite Transistors
XN06114
(XN6114)
Silicon PNP epitaxial planar transistor
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2114 (UN2114)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: CK
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
50
50
100
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
V
CBO
V
CEO
I
C
V
V
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
6
Tr2
Tr1
5
4
3
1
2
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
2.90
1.9
±
0.1
0.95
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
0.50
+0.10
0.95
6
5
4
1
3
2
+0.20
5
°
10
°
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
50
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
0.5
0.2
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
h
FE(Small
mA
Forward current transfer ratio
h
FE
ratio
*
80
0.50
0.99
/Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
+
30%
V
Input resistance
R
1
30%
10
k
Resistance ratio
R
1
/ R
2
f
T
0.17
0.21
0.25
Transition frequency
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
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