參數(shù)資料
型號： XN1C301
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Silicon PNP(NPN) epitaxial planer transistor
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： MINI PACKAGE-5
文件頁數(shù)： 1/5頁
文件大?。?/td> 60K
代理商： XN1C301
1
Composite Transistors
XN1C301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
I
Features
G
Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SB709A+2SD601A
I
Absolute Maximum Ratings
(Ta=25C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 :Base (Tr1)
Emitter (Tr2)
5 :Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
4R
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector current
–100
mA
Peak collector current
–200
mA
Collector to base voltage
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector current
100
mA
Peak collector current
200
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Tr1
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
Tr2
5
1
Tr2
Tr1
4
3
2
相關(guān)PDF資料
PDF描述
XN1D873 Silicon N-channel junction FET
XN2210 Silicon NPN epitaxial planer transistor
XN2211 Silicon NPN epitaxial planer transistor
XN2212 Silicon NPN epitaxial planer transistor
XN2215 Silicon NPN epitaxial planer transistor
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