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參數(shù)資料
| 型號： | XIT1700 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
| 中文描述： | 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | XIT1700 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX UNITS
TEST CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
-40
V
V
GS
= 0, I
D
= -10
μ
A
BV
SDS
Source to Drain Breakdown Voltage
-40
V
V
GS
= 0, I
D
= -10
μ
A
I
GSS
Gate Leakage Current
(See note 2)
I
DSS
Drain to Source Leakage Current
200
pA
V
GS
= 0, V
DS
= -20V
I
DSS
(150
o
C)
Drain to Source Leakage Current
0.4
μ
A
I
SDS
Source to Drain Leakage Current
400
pA
I
SDS
(150
o
C)
Source to Drain Leakage Current
0.8
μ
A
V
GS(th)
Gate Threshold Voltage
-2
-5
V
V
GS
= V
DS
, I
D
= -10
μ
A
r
DS(on)
Static Drain to Source "on" Resistance
400
ohms
V
GS
= -10V, V
DS
= 0
I
DS(on)
Drain to Source "on" Current
2
mA
V
GS
= -10V, V
DS
= -15V
g
fs
Forward Transconductance Common Source
2000
4000
μ
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
C
iss
Small Signal, Short Circuit, Common Source,
Input Capacitance
5
pF
V
DS
= -15V, I
D
= -10mA
f = 1MHz (Note 3)
C
rss
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
1.2
pF
V
DG
= -15V, I
D
= 0
f = 1MHz (Note 3)
C
oss
Small Signal, Short Circuit, Common Source,
Output Capacitance
3.5
pF
V
DS
= -15V, I
D
= -10mA
f = 1MHz (Note 3)
NOTES: 1.
Device must not be tested at
±
125V more than once nor longer than 300ms.
2.
Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3.
For design reference only, not 100% tested.
IT1700
C ORPORATION
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