參數資料
型號: XC9303B03KR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Step-Up & Down DC / DC Controller ICs
中文描述: 升壓
文件頁數: 7/18頁
文件大小: 244K
代理商: XC9303B03KR
"
TEST CIRCUITS
Circuit 1 :
L:
SD:
CL:
CIN:
PNP Tr 1 : 2SA1213 (TOSHIBA)
Tr 2 :
CPH3409 (SANYO)
Tr 3 :
CPH3409 (SANYO)
RFB :
Please use by the conditions as below.
RFB1 + RFB2
1M
RFB1 / RFB2 = (Setting Output Voltage / 0.9) -1
CFB :
fztb = 1 / (2 x
π
x CFB x RFB1) =1kHz ~ 50kHz (12kHz usual)
22
μ
H (SUMIDA CDRH127 / LD)
CMS02 (TOSHIBA, Schottky Barriar Diode)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
Circuit 3 :
L:
SD:
CL:
CIN:
Tr 1 :
Tr 2 :
Tr 3 :
Circuit 4 :
L:
SD:
CL:
CIN:
Tr 1 :
Tr 2 :
Tr 3 :
22
μ
H (SUMIDA CDRH127 / LD)
CMS02 (TOSHIBA, Schottky Barriar Diode)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
CPH6315 (SANYO)
CPH3409 (SANYO)
CPH3409 (SANYO)
22
μ
H (SUMIDA CDRH127 / LD)
CMS02 (TOSHIBA, Schottky Barriar Diode)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
16MCE476MD2 (NIHONCHEMICON, Tantalum Type)
CPH6315 (SANYO)
CPH3409 (SANYO)
CPH3409 (SANYO)
7
XC9303 Series
High Efficiency, Synchronous
Step-Up & Down DC / DC Controller ICs
L
Tr1:Pch MOSFET
Tr2:Nch MOSFET
C
IN
V
IN
C
L
V
OUT
SBD
R
L
A
V
A
Circuit 3
VDD
EXT1
PWM
CE
GND
EXT2
FB
NC
Tr3:Nch MOSFET
SBD
L
Tr2:Nch MOSFET
C
IN
V
IN
C
L
V
OUT
SBD
R
L
A
V
A
Circuit 1
VDD
EXT1
PWM
CE
GND
EXT2
FB
NC
Tr3:Nch MOSFET
SBD
PNP
Tr1
5
2
Circuit 2
V
PWM
V
CE
V
DD
VDD
EXT1
PWM
CE
GND
EXT2
FB
NC
A
V
FB
A
A
A
1
μ
F
L
Tr1:Pch MOSFET
Tr2:Nch MOSFET
C
IN
V
IN
SBD
A
Circuit 4
VDD
EXT1
PWM
CE
GND
EXT2
FB
NC
Tr3:Nch MOSFET
SBD
V
CE
V
PWM
C
L
V
OUT
R
L
A
V
200k
75k
62pF
OSC
Circuit 5
V
CE
1
μ
F
V
D
D
V
PWM
V
FB
V
EXT2
V
EXT1
VDD
EXT1
PWM
CE
GND
EXT2
FB
NC
Rp
Rp
OSC
OSC
RFB1
RFB2
CFB
C
IN
OSC
OSC
C
IN
C
IN
Semiconductor Ltd.
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