參數(shù)資料
型號: XC888CM
廠商: INFINEON TECHNOLOGIES AG
元件分類: 8位微控制器
英文描述: 8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash
中文描述: 8位微控制器與2/4/8K字節(jié)在系統(tǒng)可編程閃存
文件頁數(shù): 50/119頁
文件大小: 895K
代理商: XC888CM
XC886/888CLM
Functional Description
Data Sheet
Prelimary
46
V0.1, 2006-02
3.3.2
For the P-Flash banks, a programmed wordline (WL) must be erased before it can be
reprogrammed as the Flash cells can only withstand one gate disturb. This means that
the entire sector containing the WL must be erased since it is impossible to erase a
single WL.
For the D-Flash bank, the same WL can be programmed twice before erasing is required
as the Flash cells are able to withstand two gate disturbs. Hence, it is possible to
program the same WL, for example, with 16 bytes of data in two times (see
Figure 12
).
Flash Programming Width
Figure 12
D-Flash Programming
Note: When programming a D-Flash WL the second time, the previously programmed
Flash memory cells (whether 0s or 1s) should be reprogrammed with 0s to retain
its original contents and to prevent “over-programming”.
0000 ….. 0000
H
0000 ….. 0000
H
32 bytes (1 WL)
1111 ….. 1111
H
0000 ….. 0000
H
16 bytes
16 bytes
0000 ….. 0000
H
1111 ….. 1111
H
Flash memory cells
32-byte write buffers
1111 ….. 0000
H
1111 ….. 1111
H
0000 ….. 0000
H
1111 ….. 0000
H
Program 1
Program 2
Note: A Flash memory cell can be programmed
from 0 to 1, but not from 1 to 0.
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