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參數(shù)資料
| 型號： | XC612E |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | CMOS Low Power Consumption |
| 中文描述： | CMOS低功耗 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 223K |
| 代理商： | XC612E |
174
2
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Detect Voltage
V
DET1
V
DF1
Voltage when V
DET1
changes from
H to L following a reduction of V
IN1
V
DF1
x 0.98
V
DF1
V
DF1
x 1.02
V
Detect Voltage
V
DET2
V
DF2
Voltage when V
DET2
changes from
H to L following a reduction of V
IN2
V
DF2
x 0.98
V
DF1
x 1.02
V
DF2
V
Hysteresis Range 1
V
HYS1
Voltage (V
DR1
) - V
DF1
when V
DET1
changes
from L to H following an increase of V
IN1
V
DF1
(T)
x 0.08
V
DF1
(T)
x 0.05
V
DF1
(T)
x 0.02
V
DF2
(T)
x 0.08
3.90
4.50
5.10
5.70
6.30
1.30
1.50
1.70
1.90
2.10
10
V
DF
2(T)
x 0.05
1.35
1.50
1.95
2.40
3.00
0.45
0.50
0.65
0.80
1.00
V
DF2
(T)
x 0.02
Hysteresis Range 2
V
HYS2
Voltage (V
DR2
) - V
DF2
when V
DET2
changes
from L to H following an increase of V
IN2
Supply Current
(Input Current V
IN1
)
I
SS
V
IN1
=1.5V
2.0V
3.0V
4.0V
5.0V
V
IN1
=1.5V
2.0V
3.0V
4.0V
5.0V
μ
A
Input Current V
IN2
I
IN2
μ
A
Operating Voltage
V
IN1
V
DF
(T) = 1.5V to 6.0V
1.5
V
Output Current
*
I
VDET
N-ch
P-ch
V
DS
= 0.5V
V
IN1
=1.0V
V
IN1
=2.0V
V
IN1
=3.0V
V
IN1
=4.0V
V
IN1
=5.0V
2.2
7.7
10.1
11.5
13.0
-10.0
-2.0
0.3
3.0
5.0
6.0
7.0
V
DS
= -2.1V
V
IN1
=8.0V
(CMOS)
mA
Temperature Characteristics
*
–
30
:
≤
Topr
≤
80
:
±
100
-
ppm/
:
Transient Delay Time
*
(Release Voltage
Output Conversion)
tDLY
0.2
ms
(V
DR
V
OUT
conversion)
CIRCUIT
1
1
1
V
1
2
2
-
3
-
5
V
DF
Topr
V
DF
1. V
DF1
(T), V
DF2
(T) : User specified detect voltage.
2. Release voltage (V
DR
) = V
DF
+V
HYS
3. Those parameters marked with an asterisk apply to both V
DET1
and V
DET2
.
4. Input Voltage : please ensure that V
IN1
>
V
IN2
(Input voltage of XC612D and XC612E series : please ensure that V
IN1
≥
V
IN2
, V
IN1
< V
IN2
.)
5. V
IN1
pin serve both I
SS
and power supply pin so that V
IN2
operates V
IN1
as a power supply source. For normal operation of V
IN2
, operating voltage
higher than the minimum is needed to be applied to power supply pin V
IN1
.
6. For CMOS output products, high level output voltage which is generated when the transient response is released becomes input voltage of V
IN
.
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