參數(shù)資料
型號(hào): 2SD1383KT146B
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SMT3, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 81K
代理商: 2SD1383KT146B
2SD1383K
Transistors
Rev.C
1/2
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SB852K.
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD1383K
SMT3
B
W
T146
3000
Denotes hFE
Dimensions (Unit : mm)
Each lead has same dimensions
2SD1383K
(1)Emitter
(2)Base
(3)Collector
Circuit diagram
RBE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
150
55 to +150
1
2
Unit
V
A (DC)
1.5
A (Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 RBE=0
2 Single pulse Pw=10ms
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
=10V, IE=0A, f=1MHz
fT
250
MHz
VCE
=5V, IE= 10mA, f=100MHz
BVCBO
40
V
IC
=100A
BVCES
32
V
IC
= 1mA , RBE=0
BVEBO
6
V
IE
=100A
ICBO
1
AVCB=24V
IEBO
1
AVEB=4.5V
VCE(sat)
5000
IC
=200mA, IB=0.4mA
hFE
1.5
V
VCE
=5V, IC=0.1A
Cob
3
pF
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
相關(guān)PDF資料
PDF描述
2SD1383KT146 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1383KT147/B 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1383KT147/A 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1383KT147/AB 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1404 7 A, 150 V, NPN, Si, POWER TRANSISTOR
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