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參數(shù)資料
| 型號： | XC18V512SOG20C |
| 廠商： | Xilinx Inc |
| 文件頁數(shù)： | 8/24頁 |
| 文件大小： | 0K |
| 描述： | IC PROM REPROGR 512KB 20-SOIC |
| 標(biāo)準(zhǔn)包裝： | 37 |
| 可編程類型： | 系統(tǒng)內(nèi)可編程 |
| 存儲容量： | 512kb |
| 電源電壓： | 3 V ~ 3.6 V |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 20-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-SOIC |
| 包裝： | 管件 |
XC18V00 Series In-System-Programmable Configuration PROMs
DS026 (v5.2) January 11, 2008
Product Specification
16
R
Recommended Operating Conditions
Quality and Reliability Characteristics
DC Characteristics Over Operating Conditions
Symbol
Parameter
Min
Max
Units
VCCINT
Internal voltage supply
3.0
3.6
V
VCCO
Supply voltage for output drivers for 3.3V operation
3.0
3.6
V
Supply voltage for output drivers for 2.5V operation
2.3
2.7
V
VIL
Low-level input voltage
0
0.8
V
VIH
High-level input voltage
2.0
5.5
V
VO
Output voltage
0
VCCO
V
TVCC
VCCINT rise time from 0V to nominal voltage(1)
150
ms
TA
Operating ambient temperature(2)
–40
85
° C
Notes:
1.
At power up, the device requires the VCCINT power supply to rise monotonically from 0V to nominal voltage within the specified VCCINT rise
time. If the power supply cannot meet this requirement, then the device might not perform power-on-reset properly. See Figure 9, page 14.
2.
Covers the industrial temperature range.
Symbol
Description
Min
Max
Units
TDR
Data retention
20
–
Years
NPE
Program/erase cycles (Endurance)
20,000
–
Cycles
VESD
Electrostatic discharge (ESD)
2,000
–
Volts
Symbol
Parameter
Test Conditions
Min
Max
Units
VOH
High-level output voltage for 3.3V outputs
IOH = –4 mA
2.4
–
V
High-level output voltage for 2.5V outputs
IOH = –500 μA90% VCCO
–V
VOL
Low-level output voltage for 3.3V outputs
IOL = 8 mA
–
0.4
V
Low-level output voltage for 2.5V outputs
IOL = 500 μA–
0.4
V
ICC
Supply current, active mode
25 MHz
–
25
mA
ICCS
Supply current, standby mode
–
10
mA
IILJ
JTAG pins TMS, TDI, and TDO pull-up current (1)
VCCINT = MAX
VIN = GND
–100
μA
IIL
Input leakage current
VCCINT = Max
VIN = GND or VCCINT
–10
10
μA
IIH
Input and output high-Z leakage current
VCCINT = Max
VIN = GND or VCCINT
–10
10
μA
CIN
Input capacitance
VIN = GND
f = 1.0 MHz
–8
pF
COUT
Output capacitance
VOUT = GND
f = 1.0 MHz
–
14
pF
Notes:
1.
Internal pull-up resistors guarantee valid logic levels at unconnected input pins. These pull-up resistors do not guarantee valid logic levels
when input pins are connected to other circuits.
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