IRPD(2) Current through pull-do" />
參數(shù)資料
型號(hào): XA3S250E-4VQG100Q
廠商: Xilinx Inc
文件頁(yè)數(shù): 37/37頁(yè)
文件大小: 0K
描述: IC FPGA SPARTAN-3E 250K 100-VQFP
標(biāo)準(zhǔn)包裝: 90
系列: Spartan®-3E XA
LAB/CLB數(shù): 612
邏輯元件/單元數(shù): 5508
RAM 位總計(jì): 221184
輸入/輸出數(shù): 66
門數(shù): 250000
電源電壓: 1.14 V ~ 1.26 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 125°C
封裝/外殼: 100-TQFP
供應(yīng)商設(shè)備封裝: 100-VQFP(14x14)
DS635 (v2.0) September 9, 2009
Product Specification
9
R
IRPD(2)
Current through pull-down resistor at
User I/O, Dual-Purpose, Input-only,
and Dedicated pins
VIN = VCCO
0.10
0.75
mA
RPD(2)
Equivalent pull-down resistor value at
User I/O, Dual-Purpose, Input-only,
and Dedicated pins (based on IRPD
per Note 2)
VIN = VCCO = 3.0V to 3.45V
4.0
34.5
k
Ω
VIN = VCCO = 2.3V to 2.7V
3.0
27.0
k
Ω
VIN = VCCO = 1.7V to 1.9V
2.3
19.0
k
Ω
VIN = VCCO = 1.4V to 1.6V
1.8
16.0
k
Ω
VIN = VCCO = 1.14V to 1.26V
1.5
12.6
k
Ω
IREF
VREF current per pin
All VCCO levels
–10
+10
μA
CIN
Input capacitance
-
10
pF
RDT
Resistance of optional differential
termination circuit within a differential
I/O pair. Not available on Input-only
pairs.
VOCM Min
V
ICM
V
OCM Max
VOD Min
V
ID
V
OD Max
VCCO = 2.5V
–120
Ω
Notes:
1.
The numbers in this table are based on the conditions set forth in Table 6.
2.
This parameter is based on characterization. The pull-up resistance RPU = VCCO / IRPU. The pull-down resistance RPD = VIN / IRPD.
Table 7: General DC Characteristics of User I/O, Dual-Purpose, and Dedicated Pins (Continued)
Symbol
Description
Test Conditions
Min
Typ
Max
Units
Table 8: Quiescent Supply Current Characteristics
Symbol
Description
Device
I-Grade Maximum
Q-Grade
Maximum
Units
ICCINTQ
Quiescent VCCINT
supply current
XA3S100E
36
58
mA
XA3S250E
104
158
mA
XA3S500E
145
300
mA
XA3S1200E
324
500
mA
XA3S1600E
457
750
mA
ICCOQ
Quiescent VCCO
supply current
XA3S100E
1.5
2.0
mA
XA3S250E
1.5
3.0
mA
XA3S500E
1.5
3.0
mA
XA3S1200E
2.5
4.0
mA
XA3S1600E
2.5
4.0
mA
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