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參數(shù)資料
| 型號(hào)： | X3N190-91 |
| 廠商： | CALOGIC LLC |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | X3N190-91 |
3N190 /3N191
C ORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N190/91
MIN MAX
1500 4000
UNITS
TEST CONDITIONS
g
fs
Y
os
C
iss
C
rss
C
oss
Forward Transconductance (Note 3)
Output Admittance
Input Capacitance Output Shorted (Note 5)
Reverse Transfer Capacitance (Note 5)
Output Capacitance Input Shorted (Note 5)
μ
S
V
DS
= -15V, I
D
= -10mA
f = 1kHz
300
4.5
1.0
3.0
pF
f = 1MHz
SWITCHING CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
t
d(on)
Turn On Delay Time
15
ns
V
DD
= -15V, I
D
= -10mA, R
G
= R
L
= 1.4k
(Note 5)
t
r
Rise Time
30
t
off
Turn Off Time
50
MATCHING CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
Y
fs1
/ Y
fs2
Forward Transconductance Ratio
0.85
1.0
V
DS
= -15V, I
D
= -500
μ
A, f = 1kHz
V
GS1-2
Gate Source Threshold Voltage Differential
100
mV
V
DS
= -15V, I
D
= -500
μ
A
V
GS1
2
T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
μ
V/
o
C
V
DS
= -15V, I
D
= -500
μ
A,
T = -55
C to +25
C
V
GS1
2
T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
μ
V/
o
C
V
DS
= -15V, I
D
= -500
μ
A
T = +25
C to +125
C
NOTES: 1.
Per transistor.
2.
Approximately doubles for every 10
o
C increase in T
A
.
3.
Pulse test duration = 300
μ
s; duty cycle
≤
3%.
4.
Measured at end points, T
A
and T
B
.
5.
For design reference only, not 100% tested.
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