- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376437 > X28HC64JIZ-90 (INTERSIL CORP) 5 Volt, Byte Alterable EEPROM PDF資料下載
參數(shù)資料
| 型號： | X28HC64JIZ-90 |
| 廠商： | INTERSIL CORP |
| 元件分類： | DRAM |
| 英文描述： | 5 Volt, Byte Alterable EEPROM |
| 中文描述： | 8K X 8 EEPROM 5V, 90 ns, PQCC32 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 265K |
| 代理商： | X28HC64JIZ-90 |
11
FN8109.1
June 7, 2006
SYSTEM CONSIDERATIONS
Because the X28HC64 is frequently used in large
memory arrays, it is provided with a two-line control
architecture for both read and write operations. Proper
usage can provide the lowest possible power dissipa-
tion, and eliminate the possibility of contention where
multiple I/O pins share the same bus.
To gain the most benefit, it is recommended that CE
be decoded from the address bus, and be used as the
primary device selection input. Both OE and WE would
then be common among all devices in the array. For a
read operation, this assures that all deselected
devices are in their standby mode, and that only the
selected device(s) is/are outputting data on the bus.
Because the X28HC64 has two power modes,
standby and active, proper decoupling of the memory
array is of prime concern. Enabling CE will cause tran-
sient current spikes. The magnitude of these spikes is
dependent on the output capacitive loading of the I/Os.
Therefore, the larger the array sharing a common bus,
the larger the transient spikes. The voltage peaks
associated with the current transients can be sup-
pressed by the proper selection and placement of
decoupling capacitors. As a minimum, it is recom-
mended that a 0.1μF high frequency ceramic capacitor
be used between V
CC
and V
SS
at each device.
Depending on the size of the array, the value of the
capacitor may have to be larger.
In addition, it is recommended that a 4.7μF electrolytic
bulk capacitor be placed between V
CC
and V
SS
for
each eight devices employed in the array. This bulk
capacitor is employed to overcome the voltage droop
caused by the inductive effects of the PC board traces.
Normalized I
CC
(RD) by Temperature
Over Frequency
Normalized I
CC
(RD) @ 25% Over
the V
CC
Range and Frequency
1.4
1.2
0.8
0.4
0.6
0.2
1.0
0
10
20
- 55°C
+ 25°C
+ 125°C
Frequency (MHz)
5.5 V
CC
I
C
R
N
1.4
1.2
0.8
0.4
0.6
0.2
1.0
0
10
20
Frequency (MHz)
4.5 V
CC
5.0 V
CC
5.5 V
CC
I
C
R
N
X28HC64
相關PDF資料 |
PDF描述 |
|---|---|
| X28HC64JZ-70 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PIZ-90 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PZ-70 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PZ-90 | 5 Volt, Byte Alterable EEPROM |
| X28HC64SZ-70 | 5 Volt, Byte Alterable EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| X28HC64JIZ-90T1 | 功能描述:電可擦除可編程只讀存儲器 8K X 8 電可擦除可編程只讀存儲器 CMOS, 32 LEAD PLCC, IND., 90NS, PB FREE RoHS:否 制造商:Intersil 存儲容量: 組織: 數(shù)據(jù)保留: 最大時鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風格: 封裝 / 箱體: |
| X28HC64JM-12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5 Volt, Byte Alterable EEPROM |
| X28HC64JM-15 | 制造商:Intersil Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 32PLCC - Rail/Tube 制造商:Rochester Electronics LLC 功能描述: |
| X28HC64JM-50 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:5 Volt, Byte Alterable E2PROM |
| X28HC64JM-70 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5 Volt, Byte Alterable EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復。