參數(shù)資料
    型號: X24C01MIG-2.7
    廠商: IC MICROSYSTEMS SDN BHD
    元件分類: DRAM
    英文描述: Serial E2PROM
    中文描述: 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
    封裝: ROHS COMPLIANT, MSOP-8
    文件頁數(shù): 8/14頁
    文件大?。?/td> 289K
    代理商: X24C01MIG-2.7
    8
    X24C01
    Supply Voltage
    Limits
    X24C01
    X24C01-3.5
    X24C01-3
    X24C01-2.7
    4.5V to 5.5V
    3.5V to 5.5V
    3.0V to 5.5V
    2.7V to 5.5V
    ABSOLUTE MAXIMUM RATINGS*
    Temperature Under Bias
    Storage Temperature ....................... –65
    °
    C to +150
    °
    C
    Voltage on any Pin with
    Respect to V
    SS
    ............................ –1.0V to +7.0V
    D.C. Output Current ............................................ 5 mA
    Lead Temperature (Soldering,
    10 Seconds)
    .................. –65
    °
    C to +135
    °
    C
    ............................. 300
    °
    C
    *COMMENT
    Stresses above those listed under “Absolute Maximum
    Ratings” may cause permanent damage to the device.
    This is a stress rating only and the functional operation of
    the device at these or any other conditions above those
    indicated in the operational sections of this specification is not
    implied. Exposure to absolute maximum rating conditions
    for extended periods may affect device reliability.
    RECOMMENDED OPERATING CONDITIONS
    Temperature
    Min.
    Max.
    Commercial
    Industrial
    Military
    0
    °
    C
    70
    °
    C
    +85
    °
    C
    +125
    °
    C
    –40
    °
    C
    –55
    °
    C
    D.C. OPERATING CHARACTERISTICS
    (Over recommended operating conditions, unless otherwise specified)
    Limits
    Symbol
    Parameter
    Min.
    Max.
    Units
    Test Conditions
    I
    CC(1)
    I
    CC(2)
    I
    SB1(1)
    V
    CC
    Supply Current (Read)
    V
    CC
    Supply Current (Write)
    V
    CC
    Standby Current
    1
    2
    mA
    SCL = V
    CC
    x 0.1/V
    CC
    x 0.9 Levels
    @ 100 KHz, SDA = Open
    100
    A
    SCL = SDA = V
    CC
    ,
    V
    CC
    = 5V
    ±
    10%
    SCL = SDA = V
    CC
    , V
    CC
    = 2.7V
    V
    IN
    = GND to V
    CC
    V
    OUT
    = GND to V
    CC
    I
    SB2(1)
    I
    LI
    I
    LO
    V
    lL(2)
    V
    IH(2)
    V
    OL
    V
    CC
    Standby Current
    Input Leakage Current
    Output Leakage Current
    Input Low Voltage
    Input High Voltage
    Output Low Voltage
    50
    10
    10
    A
    A
    A
    –1.0
    V
    CC
    x 0.3
    V
    V
    V
    V
    CC
    x 0.7V
    CC
    + 0.5
    0.4
    I
    OL
    = 2.1 mA
    3837 PGM T03
    CAPACITANCE
    T
    A
    = 25
    °
    C, f = 1.0 MHz, V
    CC
    = 5V
    Symbol
    Parameter
    Max.
    Units
    Test Conditions
    C
    I/O(3)
    C
    IN(3)
    Input/Output Capacitance (SDA)
    Input Capacitance (SCL)
    8
    6
    pF
    pF
    V
    I/O
    = 0V
    V
    IN
    = 0V
    3837 PGM T05
    Notes:
    (1) Must perform a stop command prior to measurement.
    (2) V
    IL
    min. and V
    IH
    max. are for reference only and are not tested.
    (3) This parameter is periodically sampled and not 100% tested.
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