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參數(shù)資料
| 型號(hào)： | X0205NN-1BA2 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1.25A SCRs |
| 中文描述： | 1.25A的可控硅 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 147K |
| 代理商： | X0205NN-1BA2 |
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MAIN FEATURES:
X02 Series
SENSITIVE
1.25A SCRs
September 2000 - Ed: 3
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
Symbol
Value
Unit
I
T(RMS)
1.25
A
V
DRM
/V
RRM
600 and 800
V
I
GT
50 to 200
μA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
TO-92
TI = 55°C
1.25
A
SOT-223
Ttab = 95°C
IT
(AV)
Average on-state current
(180° conduction angle)
TO-92
TI = 55°C
0.8
A
SOT-223
Ttab = 95°C
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
25
A
tp = 10 ms
22.5
I
2
t
I
2
t Value for fusing
tp = 10 ms
Tj = 25°C
2.5
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 60 Hz
Tj = 125°C
50
A/μs
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
1.2
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
0.2
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
G
A
K
TO-92
(X02xxA)
SOT-223
(X02xxN)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| X0205NN2BL2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X0205NN-2BL2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X0205NN5BA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X0205NN-5BA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X0205YN5BA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
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